DIELETRIC CAP HAVING MATERIAL WITH OPTICAL BAND GAP TO SUBSTANTIALLY BLOCK UV RADIATION DURING CURING TREATMENT, AND RELATED METHODS

摘要

A dielectric cap and related methods are disclosed. In one embodiment, the dielectric cap includes a dielectric material having an optical band gap (e.g., greater than about 3.0 electron-Volts) to substantially block ultraviolet radiation during a curing treatment, and including nitrogen with electron donor, double bond electrons. The dielectric cap exhibits a high modulus and is stable under post ULK UV curing treatments for, for example, copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.

主权项

1. A method of forming a dielectric cap, the method comprising:
providing an inter-level dielectric (ILD); forming a dielectric material layer over the ILD, the dielectric material having an optical band gap that substantially blocks ultraviolet radiation and includes nitrogen with electron donor, double bond electrons; and curing the dielectric material layer using the ultraviolet radiation.