FIELD EFFECT TRANSISTOR

摘要

A field effect transistor includes a semiconductor substrate having a protrusion with at least one inclined surface, a gate insulator disposed at least on a portion of the inclined surface, and a gate conductor disposed on the gate insulator, wherein the semiconductor substrate comprises doped regions sandwiching a channel region, wherein the at least one inclined surface has a first crystal orientation in the channel region, and the inclined surface has an included angle to a vertical plane with a second crystal orientation. The hole mobility and the electron mobility are substantially the same in the channel region having a crystalline orientation off from the (110) crystal orientation.

主权项

1. A field effect transistor, comprising:
a semiconductor substrate having a protrusion with at least one inclined surface, the semiconductor substrate comprising doped regions sandwiching a channel region; a gate insulator disposed at least on a portion of the inclined surface; a gate conductor disposed on the gate insulator; wherein the at least one inclined surface has a first crystal orientation in the channel region, and the inclined surface has an included angle to a vertical plane with a second crystal orientation.