| 发明名称 |
ELECTRICAL DEVICES WITH GRAPHENE ON BORON NITRIDE |
| 摘要 |
Methods of forming and resulting devices are described that include graphene devices on boron nitride. Selected methods of forming and resulting devices include graphene field effect transistors (GFETs) including boron nitride. |
| 申请公布号 |
US2014299839(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201113996214 |
申请日期 |
2011.12.21 |
| 申请人 |
Shepard Kenneth;Kim Philip;Hone James C.;Dean Cory |
发明人 |
Shepard Kenneth;Kim Philip;Hone James C.;Dean Cory |
| 分类号 |
H01L29/16;H01L29/06;H01L29/786;H01L29/66 |
主分类号 |
H01L29/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising:
a boron nitride surface; a graphene layer over the boron nitride surface having a non-zero degree of lattice mismatch; and one or more electrical contacts on the graphene layer. |
| 地址 |
Ossining NY US |
