发明名称 |
BUMP STRUCTURES FOR MULTI-CHIP PACKAGING |
摘要 |
A multi-chip package includes a substrate having a plurality of first bump structures. A pitch between first bump structures of the plurality of first bump structures is uniform across a surface of the substrate. The multi-chip package includes a first chip bonded to the substrate and a second chip bonded to the substrate. The first chip includes a plurality of second bump structures, and the plurality of second bump structures are bonded to a first set of first bump structures of the plurality of first bump structures. The second chip includes a plurality of third bump structures, and the plurality of third bump structures are bonded to a second set of first bump structures of the plurality of first bump structures. A pitch between second bump structures of the plurality of second bump structures is different from a pitch between third bump structures of the plurality of third bump structures. |
申请公布号 |
US2014299985(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201414310488 |
申请日期 |
2014.06.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU Chen-Hua;LIN Jing-Cheng |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A multi-chip package comprising:
a substrate having a plurality of first bump structures, wherein a pitch between adjacent first bump structures of the plurality of first bump structures is uniform across a surface of the substrate; a first chip bonded to the substrate, wherein the first chip comprises a plurality of second bump structures, and the plurality of second bump structures are bonded to a first set of first bump structures of the plurality of first bump structures; and a second chip bonded to the substrate, wherein the second chip comprises a plurality of third bump structures, and the plurality of third bump structures are bonded to a second set of first bump structures of the plurality of first bump structures, wherein a pitch between adjacent second bump structures of the plurality of second bump structures is different from a pitch between adjacent third bump structures of the plurality of third bump structures. |
地址 |
Hsinchu TW |