| 发明名称 |
SEMICONDUCTOR DEVICES AND FABRICATION METHODS |
| 摘要 |
A method of making a semiconductor device comprises : providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars. |
| 申请公布号 |
US2014299968(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201214002826 |
申请日期 |
2012.02.29 |
| 申请人 |
Wang Tao |
发明人 |
Wang Tao |
| 分类号 |
H01L33/00;H01L33/32;H01L29/20;H01L21/02;H01L29/06 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device comprising:
(i) providing a semiconductor wafer having a semiconductor layer; (ii) forming a first mask layer over the semiconductor layer; (iii) forming a second mask layer over the first mask layer; (iv) annealing the second mask layer to form islands; (v) etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars each having a top; and (vi) growing semiconductor material between the pillars and then over the tops of the pillars. |
| 地址 |
Sheffield GB |
