发明名称 HERMETIC PACKAGING OF INTEGRATED CIRCUIT COMPONENTS
摘要 A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives electrical signals through the conductive region. A second substrate layer is disposed proximate to the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment.
申请公布号 US2014299966(A1) 申请公布日期 2014.10.09
申请号 US201414311629 申请日期 2014.06.23
申请人 RAYTHEON COMPANY 发明人 Chahal Premjeet;Morris Francis J.
分类号 H01L23/10;H01L23/538;H01L49/02 主分类号 H01L23/10
代理机构 代理人
主权项 1. A hermetically-packaged integrated circuit, comprising: a first substrate layer comprising a dielectric region operable to perform as a capacitor for the transfer of electrical signals, the dielectric region positioned proximate an outer surface of the first substrate layer, the dielectric region formed from a thermal process performed on the first substrate layer; an integrated circuit device positioned proximate the outer surface of the first substrate layer; and a second substrate layer disposed proximate the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment.
地址 Waltham MA US
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