SILICON-CONTROLLED-RECTIFIER WITH ADJUSTABLE HOLDING VOLTAGE

摘要

In a silicon-controlled-rectifier (SCR) with adjustable holding voltage, an epitaxial layer is formed on a heavily doped semiconductor layer. A first N-well having a first P-heavily doped area is formed in the epitaxial layer. A first P-well is formed in the epitaxial layer. Besides, a first N-heavily doped area is formed in the first P-well. At least one deep isolation trench is formed in the epitaxial layer, having a depth greater than the depth of the first N-type well and located between the first P-heavily doped area and the first N-heavily doped area. A distance between the deep isolation trench and the heavily doped semiconductor layer is larger than zero.

主权项

1. A silicon-controlled-rectifier (SCR) with adjustable holding voltage, comprising:
a heavily doped semiconductor layer; an epitaxial layer formed on said heavily doped semiconductor layer; a first N-type well formed in said epitaxial layer; a first P-type heavily doped area formed in said first N-type well; a first P-type well formed in said epitaxial layer; a first N-type heavily doped area formed in said first P-type well; and at least one deep isolation trench formed in said epitaxial layer and located between said first P-type heavily doped area and said first N-type heavily doped area, wherein a spacing is defined as a distance between said deep isolation trench and said heavily doped semiconductor layer, and wherein said spacing is larger than zero, and a depth of said deep isolation trench is greater than a depth of said first N-type well.