发明名称 |
LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY |
摘要 |
A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses. |
申请公布号 |
US2014299905(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201414309658 |
申请日期 |
2014.06.19 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
YANG Jeong Hee;Kim Kyoung Wan;Yoon Yeo Jin;Kim Ye Seul;Oh Sang Hyun;Suh Duk Il;Lee Keum Ju;Lee Jin Woong;Jeong Da Yeon |
分类号 |
H01L33/42;H01L33/38 |
主分类号 |
H01L33/42 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode, comprising:
a substrate; a light-emitting structure disposed on the substrate, the light-emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a transparent electrode layer disposed on the second conductivity-type semiconductor layer, the transparent electrode comprising an upper surface comprising concave portions and convex portions; and micro-lenses disposed on the transparent electrode layer and completely covering the concave portions, and only partially covering the convex portions that are disposed between the micro-lenses. |
地址 |
Ansan-si KR |