发明名称 LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY
摘要 A light-emitting diode includes a substrate, and a light-emitting structure disposed on the substrate. The light-emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including concave portions and convex portions is disposed on the second conductivity-type semiconductor layer. Micro-lenses are disposed on the transparent electrode layer and completely cover the concave portions, and only partially cover the convex portions that are disposed between the micro-lenses.
申请公布号 US2014299905(A1) 申请公布日期 2014.10.09
申请号 US201414309658 申请日期 2014.06.19
申请人 Seoul Viosys Co., Ltd. 发明人 YANG Jeong Hee;Kim Kyoung Wan;Yoon Yeo Jin;Kim Ye Seul;Oh Sang Hyun;Suh Duk Il;Lee Keum Ju;Lee Jin Woong;Jeong Da Yeon
分类号 H01L33/42;H01L33/38 主分类号 H01L33/42
代理机构 代理人
主权项 1. A light-emitting diode, comprising: a substrate; a light-emitting structure disposed on the substrate, the light-emitting structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; a transparent electrode layer disposed on the second conductivity-type semiconductor layer, the transparent electrode comprising an upper surface comprising concave portions and convex portions; and micro-lenses disposed on the transparent electrode layer and completely covering the concave portions, and only partially covering the convex portions that are disposed between the micro-lenses.
地址 Ansan-si KR