Semiconductor Device

摘要

To provide a semiconductor device including, over the same substrate, a transistor and a resistor each including an oxide semiconductor. A semiconductor device includes a resistor having a first oxide semiconductor layer covered with a nitride insulating layer containing hydrogen and a transistor having a second oxide semiconductor layer which is covered with an oxide insulating layer, has the same composition as the first oxide semiconductor layer, and has a different carrier density from the first oxide semiconductor layer. The first oxide semiconductor layer has higher carrier density than the second oxide semiconductor layer by treatment for increasing an impurity concentration. The treatment is performed on an entire surface of the first oxide semiconductor layer processed into an island shape. Therefore, in the first oxide semiconductor layer, regions contacting the nitride insulating layer and regions contacting electrode layers in contact holes of the nitride insulating layer have the same conductivity.

主权项

1. A semiconductor device comprising:
a resistor and a transistor over a substrate, wherein the resistor comprises:
a first oxide semiconductor layer;a nitride insulating layer covering the first oxide semiconductor layer; anda first electrode and a second electrode electrically connected to the first oxide semiconductor layer in contact holes provided in the nitride insulating layer, wherein the transistor comprises:
a gate electrode layer;a second oxide semiconductor layer overlapping the gate electrode layer;an insulating layer between the gate electrode layer and the second oxide semiconductor layer;an oxide insulating layer covering the second oxide semiconductor layer; anda third electrode and a fourth electrode electrically connected to the second oxide semiconductor layer in contact holes provided in the oxide insulating layer, and wherein a carrier density of the first oxide semiconductor layer is higher than a carrier density of the second oxide semiconductor layer.