SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a microscopic transistor having high electrical characteristics with high yield; and achieve high performance, high reliability and high productivity of a semiconductor device including the transistor.SOLUTION: A semiconductor device comprises: a base insulation film; an oxide semiconductor film with a bottom face and lateral faces which are provided in the base insulation film and with an exposed top face; a source electrode and a drain electrode on the base insulation film and the oxide semiconductor film; a gate insulation film on the oxide semiconductor film, the source electrode and the drain electrode; and a gate electrode which overlaps the oxide semiconductor film on the gate insulation film.