MULTI LEVEL CELL MEMORY SYSTEM

摘要

A multi level cell memory system may include a nonvolatile memory device including a memory cell array configured to store first bit page data and second bit page data, and a page buffer configured to store data to be programmed in the memory cell array; and a memory controller configured to input first bit page data and second bit page data into the page buffer, wherein the memory controller is configured such that the memory controller inputs the first bit page data into the page buffer to temporarily store the first bit page data in a first bit page program operation, and inputs the second bit page data into the page buffer together with the temporarily stored first bit page data in a second bit page program operation.

主权项

1. A multi level cell memory system comprising:
a nonvolatile memory device including a memory cell array configured to store first bit page data and second bit page data, and a page buffer configured to store data to be programmed in the memory cell array; and a memory controller configured to input first bit page data and second bit page data into the page buffer, wherein the memory controller is configured such that the memory controller inputs the first bit page data into the page buffer and temporarily stores the first bit page data in a first bit page program operation, and inputs the second bit page data into the page buffer together with the temporarily stored first bit page data in a second bit page program operation.