| 发明名称 |
CHALCOGENIDE SWITCHING DEVICE USING GERMANIUM AND SELENIUM AND MANUFACTURING METHOD THEREOF |
| 摘要 |
Disclosed is a method for manufacturing a chalcogenide switching device includes forming a first electrode on a SOI substrate, forming a chalcogenide material composed of Gex and Se1-x formed on the first electrode, and forming a second electrode on the chalcogenide material, wherein the value x is greater than 0 and smaller than 1. A chalcogenide switching device manufactured by this method is also disclosed. |
| 申请公布号 |
US2014299833(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414242146 |
申请日期 |
2014.04.01 |
| 申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHEONG Byung-ki;KIM Sudong;LEE Suyoun;SHIN Sang-Yeol;AHN Hyung-Woo |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chalcogenide switching device, comprising:
a first electrode formed on a silicon-on-insulator (SOI) substrate; a chalcogenide material composed of Gex and Se1-x formed on the first electrode; and a second electrode formed on the chalcogenide material, wherein the value x is greater than 0 and smaller than 1. |
| 地址 |
Seoul KR |
