METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a silicon carbide semiconductor device (1) includes the following steps. A silicon carbide substrate (80) including a first main surface (80b) and a second main surface (80a) opposite the first main surface (80b) is prepared. Etching the first main surface (80b) causes an etch pit (3a) including a micro pipe to appear on the first main surface (80b). Two-dimensional location information of the micro pipe on the first main surface (80b) is obtained. The silicon carbide substrate is cut into a plurality of chips (C12-C65). The chips (C12-C65) are selected on the basis of the two-dimensional location information. The first main surface (80b) is a silicon surface or a surface that is offset from the silicon surface by an angle of 10° or less. It is thereby possible to provide a method for manufacturing a silicon carbide semiconductor device capable of accurately selecting a chip including a micro pipe.