LOCAL INTERCONNECT TO A PROTECTION DIODE

摘要

Embodiments disclosed describe approaches for providing a local interconnection between a protection diode and a gate transistor in an integrated circuit (IC) device. Specifically, described is an IC device comprising: a protection diode formed in a substrate, a replacement metal gate (RMG) transistor formed over the substrate, a first contact formed over the protection diode (and optional trench silicide layer), a second contact formed over the RMG transistor, wherein the first contact extends to connect directly with the second contact, and a top metal layer (M1) formed over the first contact and the second contact. By extending the first contact from the protection diode directly to the gate transistor as a supplemental interconnect, any charges accumulated during formation of the second contact and the set of vias will be discharged by the protection diode.

主权项

1. A method of forming an interconnect to a protection diode in a device, the method comprising:
forming a protection diode in a substrate of the device; forming a replacement metal gate (RMG) transistor over the substrate; forming a first contact over the protection diode; forming a second contact over the RMG transistor, wherein the first contact extends to connect directly with the second contact; and forming a top metal layer (M1) over the first contact and the second contact; forming a first via over the first contact; and forming a second via over the second contact, wherein M1 is coupled to the first contact and the second contact by the first via and the second via.