发明名称 FCoC (Flip Chip on Chip) Package and Manufacturing Method thereof
摘要 A manufacturing method for Flip Chip on Chip (FCoC) package based on multi-row Quad Flat No-lead (QFN) package is provided wherein the lower surface of plate metallic base material are half-etched to form grooves. Insulation filling material is filled in the half-etched grooves. The upper surface of plate metallic base material is half-etched to form chip pad and multi-row of leads. Encapsulating first IC chip, second IC chip, solder bumps, underfill material, and metal wire to form an array of FCoC package based on the type of multi-row QFN package. Sawing and separating the FCoC package array, and forming FCoC package unit.
申请公布号 US2014302640(A1) 申请公布日期 2014.10.09
申请号 US201214354592 申请日期 2012.12.04
申请人 BEIJING UNIVERSITY OF TECHNOLOGY 发明人 Qin Fei;Xia Guofeng;An Tong;Liu Chengyan;Wu Wei;Zhu Wenhui
分类号 H01L21/48;H01L21/56 主分类号 H01L21/48
代理机构 代理人
主权项 1. A Flip Chip on Chip (FCoC) package is proposed is this invention. The FCoC package comprises: a leadframe including a step-shaped structure along the vertical direction, an upper surface, a lower surface, a step surface, a chip pad, and a plurality of leads; a chip pad located at the central position of the leadframe and having a step-shaped structure along the vertical direction at the four edges, an upper surface, a lower surface and a step surface, and a plurality of leads located at a periphery of the chip pad, arrayed around the chip pad in the multi-row way, and comprise a step-shaped structure along the vertical direction, an upper surface, a lower surface and a step surface, each lead comprising an inner lead configured on the upper surface thereof and an outer lead configured on the lower surface thereof; the first metal material layer located on the upper surface of the leadframe; the second metal material layer located on the lower surface of the leadframe; an insulation filling material located under the step-shaped structure of the leadframe; the first IC chip fixed on the first metal material layer of the leadframe through an adhesive material, and located at the central position of the chip pad; the second IC chip with bumps flip-chip bonded on the active side of the first IC chip; the underfill material filled between the active sides of the first IC chip and the second IC chip to encapsulate the bumps and the active sides of the first IC chip and the second IC chip; the metal wires are used to connect the first IC chip with the inner leads of the plurality of leads with the first metal material layer; the plastic mold material encapsulating the first IC chip, the second IC chip with the bumps, the underfill material, the metal wires, the adhesive material, the first metal material layer and the leadframe.
地址 Beijing CN