N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS

摘要

The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.

主权项

1. A process for n-doping and/or increasing the current carrying capacity of an organic semiconductor composition or organic semiconductor compound, comprising
a) obtaining or providing an organic semiconductor composition or organic semiconductor compound that comprises at least two aryl or heteroaryl rings bonded to each other; b) obtaining or providing a bis-metallosandwich compound comprising two linked metallosandwich groups, wherein
i) each metallosandwich group comprises a transition metal atom independently selected from manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, and iridium, bonded to two aryl or heteroaryl rings that include at least one optionally substituted benzene or cyclopentadienyl ring, andii) one benzene or cyclopentadienyl ring from each metallosandwich group is bonded to a benzene or cyclopentadienyl ring from the other metallosandwich group by a carbon-carbon bond; c) contacting the organic semiconductor composition or organic semiconductor compound with at least some of the bis-metallosandwich compound, and optionally, wherein the carbon-carbon bond linking the rings or the two metallosandwich groups is broken and two monomeric metallosandwich cations are formed.