SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can ensure sufficient productivity and inhibit the occurrence of chips and cracks of a semiconductor wafer in dicing.SOLUTION: In a semiconductor device manufacturing method, after a weak layer 31 is formed in a semiconductor wafer 1 by irradiation of laser beams L, the weak layer 31 is cut by a tensile force of a dicing tape 4. Since semiconductor chips 10 each having an insulating resin layer 3 on a circuit face S1 are collectively formed by dicing in this method, excellent workability is achieved in comparison with the case where the insulating resin layer 3 is separately provided for each semiconductor chip 10. In addition, by preliminarily forming the weak layer 31 in the semiconductor wafer 1, damages to the semiconductor wafer 1 in dicing can be reduced thereby to inhibit the occurrence of chips and cracks.