| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A method of manufacturing a semiconductor device, includes forming a trench in a semiconductor substrate having a first face and a second face by processing the first face of the semiconductor substrate, the trench including a first portion and a second portion located between the first portion and a plane including a first face, filling an insulator in the second portion such that a space remains in the first portion and the trench is closed, and forming a plurality of elements between the first face and the second face, wherein the space and the insulator form element isolation. |
| 申请公布号 |
US2014299958(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414224288 |
申请日期 |
2014.03.25 |
| 申请人 |
Canon Kabushiki Kaisha |
发明人 |
Kokumai Kazuo |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a trench in a semiconductor substrate having a first face and a second face by processing the first face of the semiconductor substrate, the trench including a first portion and a second portion located between the first portion and a plane including a first face; filling an insulator in the second portion such that a space remains in the first portion and the trench is closed; and forming a plurality of elements between the first face and the second face, wherein the space and the insulator form element isolation. |
| 地址 |
Tokyo JP |
