| 发明名称 |
INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE |
| 摘要 |
An integrated circuit includes a gate structure over a substrate. A silicon-containing material structure is in each of recesses that are adjacent to the gate structure. The silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region. |
| 申请公布号 |
US2014299945(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414312871 |
申请日期 |
2014.06.24 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG Shih-Hsien;PAI Yi-Fang;SU Chien-Chang |
| 分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a gate structure over a substrate; and a silicon-containing material structure in each of recesses that are adjacent to the gate structure, wherein the silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region. |
| 地址 |
Hsinchu TW |
