CHARGE STORAGE APPARATUS AND METHODS

摘要

Methods of forming multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, an opening is formed in a tier of semiconductor material and a tier of dielectric. A portion of the tier of semiconductor material exposed by the opening is processed so that the portion is doped differently than the remaining semiconductor material in the tier. At least substantially all of the remaining semiconductor material of the tier is removed, leaving the differently doped portion of the tier of semiconductor material as a charge storage structure. A tunneling dielectric is formed on a first surface of the charge storage structure and an intergate dielectric is formed on a second surface of the charge storage structure. Additional embodiments are also described.

主权项

1. A method comprising:
forming an opening in a tier of semiconductor material and a tier of dielectric; processing a portion of the tier of semiconductor material exposed by the opening so that the portion is doped differently than the remaining semiconductor material in the tier; removing at least substantially all of the remaining semiconductor material of the tier, wherein the differently doped portion of the tier of semiconductor material comprises a charge storage structure; forming a tunneling dielectric on a first surface of the charge storage structure; and forming an intergate dielectric on a second surface of the charge storage structure.