SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE AND METHOD OF MANUFACTURING THE SAME

摘要

In a semiconductor device, a thin wall oxide film formed over sidewalls of an active region is formed, and a portion of the wall oxide film adjacent to a gate region is removed. A gate insulating film is formed where the portion of wall oxide film was removed to prevent a parasitic transistorfrom being generated by the wall oxide film.

主权项

1. A semiconductor device, comprising:
an active region defined by a device isolation film, the active region having a fin structure protruded in a gate region; a gate formed in the gate region over the fin structure; a wall oxide film located between the device isolation film and the active region; and a gate insulating film located between the gate and the active region, wherein a portion of the gate insulating film is provided below an upper surface of the device isolation film.