METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER AND CUTTING POSITIONING SYSTEM FOR SEMICONDUCTOR INGOT

摘要

The present invention is a method for manufacturing a semiconductor wafer in which grown-in defects are not present using the Czochralski method, wherein the method for manufacturing the semiconductor wafer is such that: a silicon semiconductor ingot is grown; thereafter, the distribution of oxygen concentration in the direction of the axis of growth for the silicon semiconductor ingot is measured, and when the difference between that measured oxygen concentration and a target value is equal to or greater than a prescribed value, cutting positioning is determined so as to include the position at which the prescribed value is met or exceeded, and when the difference between the measured oxygen concentration and the target value is less than the prescribed value, the cutting positioning is determined such that the number of blocks is minimized; and the blocks into which the silicon semiconductor ingot is cut at the determined cutting positions are sliced into semiconductor wafers. Thus, all locations that are not N regions can be accurately inspected, and semiconductor wafers without grown-in defects can be manufactured.