| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with such a new structure that the influence of variation in transistor characteristics can be reduced to achieve less variation in the output voltage of a memory cell.SOLUTION: A transistor for reading data held in a gate, included in a memory cell, is used as a source follower (drain ground). A voltage applied to a transistor generating a reference current flowing through the memory cell is determined so that a gate-source voltage is approximately equal to the threshold voltage of the transistor. With such a structure, when data stored in the memory cell is read out, the output voltage can be output as a value that is less influenced by variation of the electric field-effect mobility and size of the transistor. |
