发明名称 DENSE OXIDE COATED COMPONENT OF PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment.SOLUTION: A method comprises cold spraying a layer of pure aluminum 130 on a surface 112 of an aluminum component 100 to a predetermined thickness, and then forming a dense oxide coating 120 on the layer of pure aluminum 130 using a plasma electrolytic oxidation process. The plasma electrolytic oxidation process causes the layer 130 of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating 120 on the layer of pure aluminum 130 on the surface 112 of the aluminum component 100.
申请公布号 JP2014194080(A) 申请公布日期 2014.10.09
申请号 JP20140057461 申请日期 2014.03.20
申请人 LAM RESEARCH CORPORATION 发明人 HONA SHIN;XU LIN;JOHN MICHAEL KERNS;WILLIAM CHARLES;JOHN DAUGHERTY;SIVAKAMI RAMANATHAN;RUSSELL ORMOND;ROBERT G O'NEILL;TOM STEVENSON
分类号 C25D11/04;C23C24/04;C25D11/18;H01L21/205;H01L21/3065;H01L21/31 主分类号 C25D11/04
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