发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve electrical connection reliability.SOLUTION: A semiconductor chip 3 comprises: a semiconductor substrate 30 having through holes 30X penetrating between a first principal surface 30A and a second principal surface 30B; an insulation layer 31 formed so as to cover the second principal surface 30B of the semiconductor substrate 30 and having openings 31X at positions opposed to the through holes 30X, respectively; and through electrodes 32 formed on the through holes 30X and the openings 31X which are covered with an insulation film 33. Upper end faces of the through electrodes 32 exposed on the insulation layer 31 serve as pads when another semiconductor chip 4 is laminated on the semiconductor chip 3. The upper end faces of the through electrodes 32 are formed to be flush with a surface opposite to a surface contacting the semiconductor substrate 30 of the insulation layer 31.</p>
申请公布号 JP2014195041(A) 申请公布日期 2014.10.09
申请号 JP20130217624 申请日期 2013.10.18
申请人 SHINKO ELECTRIC IND CO LTD 发明人 ICHIKAWA SUMIHIRO;YAMANO KOJI
分类号 H01L23/12 主分类号 H01L23/12
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