Semiconductor Device and Method for Fabricating the Same

摘要

Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

主权项

1. A semiconductor device comprising:
a substrate; an isolation film on the substrate; a fin projecting away from the substrate through a recess in the isolation film; a gate electrode that crosses the fin; a source/drain formed on a side of the gate electrode, the source/drain including a first film and a second film; and a stress film that is on a side surface of the fin, the stress film positioned between the isolation film and the source/drain.