发明名称 |
METHOD OF FABRICATING IGZO BY SPUTTERING IN OXIDIZING GAS |
摘要 |
In some embodiments, oxidants such as ozone (O3) and/or nitrous oxide (N2O) are used during the reactive sputtering of metal-based semiconductor layers used in TFT devices. The O3 and N2O gases are stronger oxidants and result in a decrease in the concentration of oxygen vacancies within the metal-based semiconductor layer. The decrease in the concentration of oxygen vacancies may result in improved stability under conditions of negative bias illumination stress (NBIS). |
申请公布号 |
WO2014165005(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
WO2014US24105 |
申请日期 |
2014.03.12 |
申请人 |
INTERMOLECULAR, INC |
发明人 |
LIANG, HAIFAN;CHEN, CHARLENE;LE, MINH HUU;LEE, SANG;VAN DUREN, JEROEN |
分类号 |
H01L31/032;H01L21/203;H01L21/363;H01L31/0392 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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