| 摘要 |
To provide a method for manufacturing a semiconductor device, which uses a method for bonding a supporting substrate to a semiconductor wafer, said method being applicable to a high-temperature process at around 1,000°C. A method for manufacturing a semiconductor device, which comprises at least: a back surface bonding step wherein at least a part of the back surface of a semiconductor wafer and a supporting substrate are bonded with each other with use of a silane coupling agent; a functional structure forming step wherein a functional structure is formed on the front surface of the semiconductor wafer; a fracture layer forming step wherein a fracture layer is formed in at least a part of the outer circumferential portion of the bonding interface between the semiconductor wafer and the supporting substrate by putting the collection point of the laser light, which transmits through the semiconductor wafer, on the bonding interface and irradiating the bonding interface with the laser light; a fracture layer separating step wherein the fracture layer is separated; a bonding interface separating step wherein the bonding interface is separated; and a back surface processing step wherein the back surface of the semiconductor wafer is subjected to back surface processing. |
