发明名称 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY STORAGE MEDIUM
摘要 There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.
申请公布号 US2014299161(A1) 申请公布日期 2014.10.09
申请号 US201414246714 申请日期 2014.04.07
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA Keiichi;YOSHIHARA Kousuke;ISEKI Tomohiro
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A substrate processing method, comprising: supplying a developing liquid to a surface of an exposed substrate so as to form a resist pattern; supplying a cleaning liquid to the surface of the substrate so as to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate so as to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.
地址 TOKYO JP