发明名称 |
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY STORAGE MEDIUM |
摘要 |
There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force. |
申请公布号 |
US2014299161(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201414246714 |
申请日期 |
2014.04.07 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TANAKA Keiichi;YOSHIHARA Kousuke;ISEKI Tomohiro |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing method, comprising:
supplying a developing liquid to a surface of an exposed substrate so as to form a resist pattern; supplying a cleaning liquid to the surface of the substrate so as to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate so as to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force. |
地址 |
TOKYO JP |