Semiconductor Device Including a Gate Trench and a Source Trench

摘要

A semiconductor device includes a source trench extending into a semiconductor body from a first surface of the semiconductor body. A source trench dielectric and a source trench electrode are in the source trench. A gate trench dielectric and a gate trench electrode are in a gate trench extending into the semiconductor body from the first surface. A body region of a first conductivity type is between the gate and source trenches. A source region of a second conductivity type different from the first conductivity type is between the gate and source trenches. An interconnection electrically couples the body region and the source trench electrode. The interconnection adjoins a lateral face of the source trench electrode and the body region. A source contact is on the source trench electrode at the first surface.

主权项

1. A semiconductor device, comprising:
a source trench extending into a semiconductor body from a first surface of the semiconductor body; a source trench dielectric and a source trench electrode in the source trench; a gate trench dielectric and a gate trench electrode in a gate trench extending into the semiconductor body from the first surface; a body region of a first conductivity type between the gate and source trenches; a source region of a second conductivity type different from the first conductivity type between the gate and source trenches; an interconnection electrically coupling the body region and the source trench electrode, wherein the interconnection adjoins a lateral face of the source trench electrode and of the body region; and a source contact on the source trench electrode at the first surface.