Semiconductor Device and Method of Forming Conductive Vias Using Backside Via Reveal and Selective Passivation

摘要

A semiconductor device includes a plurality of semiconductor die and a plurality of conductive vias formed in the semiconductor die. An insulating layer is formed over the semiconductor die while leaving the conductive vias exposed. An interconnect structure is formed over the insulating layer and conductive vias. The insulating layer is formed using electrografting or oxidation. An under bump metallization is formed over the conductive vias. A portion of the semiconductor die is removed to expose the conductive vias. The interconnect structure is formed over two or more of the conductive vias. A portion of the semiconductor die is removed to leave the conductive vias with a height greater than a height of the semiconductor die. A second insulating layer is formed over the first insulating layer. A portion of the second insulating layer is removed to expose the conductive via.

主权项

1. A method of making a semiconductor device, comprising:
providing a plurality of semiconductor die; forming a plurality of conductive vias though the semiconductor die; forming an insulating layer over the semiconductor die while leaving the conductive vias exposed; and forming an interconnect structure over the insulating layer and conductive vias.