Semiconductor Device and Method

摘要

A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.

主权项

1. A semiconductor device comprising:
a dielectric layer over a substrate; a nitrogen free anti-reflection layer overlying the dielectric layer; a hard mask over the nitrogen free anti-reflection layer; a capping layer in physical contact with the hard mask, wherein the capping layer has a selectivity to the dielectric layer greater than about 1:5; and an interconnect comprising a trench portion and a via portion, the interconnect extending through the capping layer, the hard mask, and the dielectric layer.