| 主权项 |
1. A method of fabricating a through substrate via, comprising:
defining a through substrate via cavity in a substrate; depositing a first isolation layer in the cavity, the first isolation layer having first surface, on a surface of the substrate; filling the cavity with a conductive material; and depositing a second isolation layer surrounding the through substrate via, the second isolation layer comprising a recessed portion to relieve stress from the conductive material and a dielectric portion, the recessed portion in close proximity to an active portion of the substrate, a second surface of the first isolation layer on the second isolation layer, the recessed portion defined between the first isolation layer and the conductive material. |
