PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM

摘要

A photoelectric conversion unit has first semiconductor regions and a second semiconductor region that is disposed between the first semiconductor regions being adjacently disposed in the unit. Impurity concentration profile in a depth direction of the first and semiconductor regions has a plurality of peaks. The impurity concentration peaks of the first semiconductor region include a first impurity concentration peak and a second impurity concentration peak being lower than the first impurity concentration peak. The impurity concentration peaks of the second semiconductor region include a third, a fourth, and a fifth impurity concentration peak. The fourth impurity concentration peak is higher than the third impurity concentration peak, and a fifth impurity concentration peak is higher than the third impurity concentration peak. The depth of the third impurity concentration peak is closer to the depth of the second impurity concentration peak than that of the first impurity concentration peak.

主权项

1. A photoelectric conversion apparatus having a plurality of photoelectric conversion units, each including a plurality of photoelectric conversion elements, the apparatus comprising:
a first semiconductor region of a first conductivity type configured to collect signal charges in each of the plurality of photoelectric conversion elements; and a second semiconductor region of a second conductivity type between the first semiconductor regions of the photoelectric conversion elements that are included in a photoelectric conversion unit and are disposed adjacent to each other, wherein the first semiconductor region has a plurality of impurity concentration peaks arranged at different depths from each other; and the second semiconductor region has a plurality of impurity concentration peaks arranged at different depths from each other; wherein the plurality of impurity concentration peaks in the first semiconductor region include a first impurity concentration peak; a second impurity concentration peak having a lower impurity concentration than that the first impurity concentration peak has; and the plurality of impurity concentration peaks in the second semiconductor region include a third impurity concentration peak; a fourth impurity concentration peak having a higher impurity concentration than that the third impurity concentration peak has, and arranged on a surface side of the third impurity concentration peak; and a fifth impurity concentration peak having a higher impurity concentration than that the third impurity concentration peak has, and arranged on a deeper side of the third impurity concentration peak; wherein a difference between the depth where the third impurity concentration peak is arranged and the depth where the second impurity concentration peak is arranged is smaller than a difference between the depth where the third impurity concentration peak is arranged and the depth where the first impurity concentration peak is arranged.