| 摘要 |
<p>A photoelectric conversion element comprising: a first conductive layer provided upon an intrinsic layer and containing a first conductive hydrogenated amorphous silicon; a second conductive layer containing a second conductive hydrogenated amorphous silicon; an insulating layer; a first electrode provided upon the first conductive layer; and a second electrode provided upon the second conductive layer. An end section of the first conductive layer protrudes from an end of the insulating layer towards the second electrode.</p> |
