MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH INTEGRATED MAGNETIC FILM ENHANCED CIRCUIT ELEMENTS

摘要

PROBLEM TO BE SOLVED: To provide magnetoresistive random access memory with integrated magnetic film enhanced circuit elements.SOLUTION: A magnetoresistive random access memory (MRAM) integrated circuit includes a substrate, a magnetic tunnel junction region, a magnetic circuit element, and an integrated magnetic material. The magnetic tunnel junction region is disposed on the substrate, and includes a first magnetic layer and a second magnetic layer separated by a tunnel barrier insulating layer. The magnetic circuit element region is disposed on the substrate, and includes a plurality of interconnected metal portions. The integrated magnetic material is disposed on the substrate adjacently to the plurality of interconnected metal portions. This invention can reduce, by sharing manufacturing processes, manufacturing complexity such as the number of processing steps, cost, and types of materials.