| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process of manufacturing a semiconductor element capable of shortening an annealing time by enlarging a beam spot area without raising output power of a laser light source.SOLUTION: Dopant ions are injected into a surface layer part of a semiconductor substrate. By, after injecting the dopant ions, injecting the same element as a constituting element of the semiconductor substrate into the surface layer part of a semiconductor substrate, density of crystal defects in the surface layer part of a semiconductor substrate is raised. By, after raising the density of crystal defects, making a laser beam incident on a surface of the semiconductor substrate, the dopants are activated.</p> |
