| 发明名称 |
Method of Manufacturing a Semiconductor Device Including an Edge Area |
| 摘要 |
A method of manufacturing a semiconductor device includes providing a doped layer containing a first dopant of a first conductivity type and forming a counter-doped zone in the doped layer in an edge area surrounding an element area of the semiconductor device. The counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type which is the opposite of the first conductivity type. A concentration of the second dopant is at least 20% and at most 100% of the concentration of the first dopant. |
| 申请公布号 |
US2014302667(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414294199 |
申请日期 |
2014.06.03 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Schulze Hans-Joachim;Mauder Anton;Hirler Franz |
| 分类号 |
H01L29/08;H01L21/265 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
providing a doped layer containing a first dopant of a first conductivity type; and forming a counter-doped zone in the doped layer in an edge area surrounding an element area of the semiconductor device, wherein the counter-doped zone contains at least the first dopant and a second dopant of a second conductivity type which is the opposite of the first conductivity type, wherein a concentration of the second dopant is at least 20% and at most 100% of the concentration of the first dopant. |
| 地址 |
Villach AT |
