发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stacked structure on a silicic substrate; depositing a Nickel-based metal layer on the substrate and the gate stacked structure; performing a first annealing so that the silicon in the substrate reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; performing a second annealing so that the Ni-rich phase of metal to silicide is transformed into a Nickel-based metal silicide source/drain, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide source/drain and the substrate. The method for manufacturing the semiconductor device according to the present invention performs the annealing after implanting the doping ions into the Ni-rich phase of metal silicide, thereby improving the solid solubility of the doping ions and forming a segregation region of highly concentrated doping ions, thus the SBH between the Nickel-based metal silicide and the silicon channel is effectively reduced, and the driving capability of the device is improved. |
申请公布号 |
US2014302644(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201214361944 |
申请日期 |
2012.03.23 |
申请人 |
Luo Jun;Zhao Chao;Zhong Huicai;Li Junfeng;Chen Dapeng |
发明人 |
Luo Jun;Zhao Chao;Zhong Huicai;Li Junfeng;Chen Dapeng |
分类号 |
H01L21/28;H01L21/283;H01L29/66 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a gate stacked structure on a silicon substrate; depositing a Nickel-based metal layer on the substrate and the gate stacked structure; performing a first annealing so that the silicon in the substrate reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; performing a second annealing so that the Ni-rich phase of metal silicide is transformed into a Nickel-based metal silicide source/drain, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide source/drain and the substrate. |
地址 |
Beijing CN |