| 发明名称 |
OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. |
| 申请公布号 |
US2014302628(A1) |
申请公布日期 |
2014.10.09 |
| 申请号 |
US201414310490 |
申请日期 |
2014.06.20 |
| 申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
Takeuchi Tatsuya;Hasegawa Taro |
| 分类号 |
H01S5/20;H01S5/30 |
主分类号 |
H01S5/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing an optical semiconductor device comprising:
forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer. |
| 地址 |
Yokohama-shi JP |
