HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE

摘要

Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

主权项

1. A plasma processing apparatus, comprising:
a chamber body and a powered gas distribution manifold enclosing a process volume; a pedestal disposed in the process volume and having a substrate supporting surface; a heating assembly comprising one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, wherein at least one of the heating elements is electrically coupled to a radio frequency (RF) filter circuit comprising a first inductor configured in parallel with a first capacitance; and a tuning assembly comprising a tuning electrode that is disposed within the pedestal between the one or more heating elements and the substrate supporting surface, wherein the tuning electrode is electrically coupled to a first RF tuner.