发明名称 PLASMA CLEANING METHOD
摘要 A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ RF nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem.
申请公布号 US2014302254(A1) 申请公布日期 2014.10.09
申请号 US201314081502 申请日期 2013.11.15
申请人 Shanghai Huali Microelectronics Corporation 发明人 Sang Ningbo;Zhou Jun
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A plasma cleaning method, comprising the steps of: performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein, a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas.
地址 Shanghai CN