发明名称 |
PLASMA CLEANING METHOD |
摘要 |
A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ RF nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem. |
申请公布号 |
US2014302254(A1) |
申请公布日期 |
2014.10.09 |
申请号 |
US201314081502 |
申请日期 |
2013.11.15 |
申请人 |
Shanghai Huali Microelectronics Corporation |
发明人 |
Sang Ningbo;Zhou Jun |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma cleaning method, comprising the steps of:
performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein, a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. |
地址 |
Shanghai CN |