发明名称 |
Plasma diagnosis apparatus and the method of the same |
摘要 |
According to the present invention, an apparatus to inspect plasma includes: a probe arranged close to a plasma; a measuring circuit part which measures output electric currents generated on the probe; and a data processing part which applies alternating voltages having two frequencies, and calculates the thickness of a dielectric layer deposited on the probe based on the size and a phase component information of each output electric current. According to the present invention, the apparatus calculates the thickness of the dielectric layer based on the size and the phase component information by applying alternating voltages having two frequencies different from each other even when the plasma state is changed by the change in plasma discharge condition. Therefore, the apparatus can monitor a deposition process more exactly. |
申请公布号 |
KR101447639(B1) |
申请公布日期 |
2014.10.08 |
申请号 |
KR20130071585 |
申请日期 |
2013.06.21 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
CHUNG, CHIN WOOK;KIM, JIN YONG |
分类号 |
G01N27/02;H05H1/00 |
主分类号 |
G01N27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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