III NITRIDE SEMICONDUCTOR VERTICAL-TYPE-STRUCTURE LED CHIP AND PROCESS FOR PRODUCTION THEREOF

摘要

High quality vertical LED chips with less cracks in the light emitting structures and a method for manufacturing the same are provided. The method includes a light emitting laminate formation step of forming a light emitting laminate by sequentially stacking a first conductivity type Group III nitride semiconductor layer, a light emitting layer, and a second conductivity type Group III nitride semiconductor layer on a growth substrate, the second conductivity type being different from the first conductivity type; a light emitting structure formation step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a connection layer on the plurality of light emitting structures; a step of forming a conductive support which also serves as a lower electrode on the connection layer; a separation step of lifting off the growth substrate from the plurality of light emitting structures; and a cutting step of cutting the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. The light emitting structure formation step includes a step of partially removing the light emitting laminate such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon ("n" is a positive integer) having rounded corners.