| 摘要 |
An objective of the present invention is to provide a method of operating a vertical heat treatment apparatus capable of reducing particle contamination after the interior of a reaction chamber is cleaned when a film forming treatment is performed by alternately supplying a raw material gas and a reaction gas to a substrate and by generating plasma from the reaction gas in the vertical heat treatment apparatus. After the cleaning process, a charge eliminating process is performed by performing the steps of: loading a substrate holding unit in which a dummy semiconductor substrate or a conductive substrate is held into the reaction chamber; and supplying the second gas into the reaction chamber through the second gas nozzle while generating plasma from the second gas without performing the step of supplying the first gas into the reaction chamber. Then, a process of forming a thin film in the reaction chamber is performed by alternately performing, a plurality of times, the steps of supplying the first gas into the reaction chamber; and supplying the second gas into the reaction chamber while generating plasma from the second gas. |
