METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A GROOVED SOURCE CONTACT REGION

摘要

Described is a method of fabricating a semiconductor device which includes the steps of forming channel layers on a substrate, forming trench patterns in the channel layers, forming an impurity body in the channel layers between the trench patterns, forming a groove in the impurity body of the channel layers, forming a device isolation region in the impurity body on the lower surface of the groove, and forming source regions in the impurity body on the sides of the groove.