| 摘要 |
<p>The present invention relates to a multi-level programming method of a phase-change memory device. The multi-level programming method comprises the steps of: applying data of multiple bits to a bit line of a cell connected to a selected word line; applying a program current to the selected word line for a program of a first data; applying the program current to the selected word line for a program of a second data and applying a multi-level program current, which is lower than the program current, to one word line adjacent to the selected word line; applying the program current to the selected word line for a program of a third data and applying the multi-level program current, which is lower than the program current, to two word lines adjacent to the selected word line.</p> |
