| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To significantly suppress thermal expansion of a thin film due to temperature elevation on being exposed to ArF exposure light; and to significantly suppress and reduce displacement of a transfer pattern due to thermal expansion caused by the temperature elevation of the thin film. <P>SOLUTION: The present invention provides a mask blank to be used for producing a transfer mask to which ArF exposure light is applied, a transfer mask produced by using the mask blank, and a transfer mask set including a set of the transfer masks to be used for transfer exposure by double patterning/double exposure techniques, wherein the thin film is formed of a material containing a fluorescent substance, which emits, on being irradiated with ArF exposure light, fluorescent light at a wavelength longer than that of the ArF exposure light. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
