| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of performing uniform switching operation of the overall semiconductor device, even when metal is formed on gate wiring. SOLUTION: The semiconductor device includes: a gate pad formed on the surface side of a substrate; the gate wiring, formed on the surface side of the substrate and electrically connected to the gate pad; on the gate wiring, the metal formed to have an outer circumference portion and a plurality of island portions formed in an island shape at a position surrounded by the outer circumference portion; and an emitter pad formed at the position surrounded by the outer circumference portion of the substrate surface side, in a manner without contacting to the metal. The emitter pad includes a plurality of large area portions and a connection portion for connecting the plurality of large area portions. The connection portion is formed between one island portion and another island portion among the plurality of island portions, or between the island portion and the outer circumference portion. COPYRIGHT: (C)2012,JPO&INPIT |
