发明名称 |
Structure and method for hard mask removal on an soi substrate without using CMP process |
摘要 |
<p>A hard mask material is removed from an SOI substrate without using a chemical mechanical polish (CMP) process. A blocking material is deposited on a hard mask material after a deep trench reactive ion etch (RIE) process. The blocking material on top of the hard mask material is removed. A selective wet etching process is used to remove the hard mask material. Trench recess depth is effectively controlled.</p> |
申请公布号 |
GB2502215(B) |
申请公布日期 |
2014.10.08 |
申请号 |
GB20130014148 |
申请日期 |
2012.01.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
OH-JUNG KWON |
分类号 |
H01L27/108;H01L21/308;H01L21/311 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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